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Smithsonian Institute… WELCOME SCOUTS BETA SHERIFFS AND SPECIAL BULLETS ~ WELCOME TO THE GOOD.. 50 Minutes on the TrackÂ .The present invention relates to a solid-state imaging device and a solid-state imaging device package structure, and particularly to a solid-state imaging device in which a semiconductor chip is flip-chip connected to a substrate, and a solid-state imaging device package structure.
FIG. 5 is a cross sectional view of a conventional solid-state imaging device.
This solid-state imaging device includes a silicon substrate 201 and an electric circuit 202 disposed on the silicon substrate 201. The electric circuit 202 includes a signal processing circuit 203 for processing an image signal, a buffer circuit 204 for receiving the processed image signal and inputting it to another external circuit (not shown), and a unit substrate 205 on which the signal processing circuit 203 and buffer circuit 204 are formed. Further, a plurality of multilayer wiring patterns 206 are formed on the unit substrate 205.
Furthermore, a low-resistant metal layer 207 is deposited on the surface of the unit substrate 205 exposed through the multilayer wiring patterns 206 and the surface of the unit substrate 205 is processed, thereby forming a bump 207. Then, the solid-state imaging device is flip-chip connected to a substrate 208 using the bump 207.
If a large current flows through the buffer circuit 204 or the signal processing circuit 203 in the solid-state imaging device, the current is accumulated in the buffer circuit 204 or the signal processing circuit 203. The rise in the voltage level at the buffer circuit 204 or the signal processing circuit 203 due to the accumulation of the current therein may cause the breakdown of the circuit of the buffer circuit 204 or the signal processing circuit 203 and malfunction thereof. In particular, a solid-state imaging device used in a digital still camera is driven by a power supply voltage of 5 V and more. Therefore, if the current of the buffer circuit 204 or the signal processing circuit 203 is accumulated therein, the probability that the buffer circuit 204 or the signal processing circuit 203 malfunctions is increased. As a result, the reliability of the solid-state imaging device is reduced and a countermeasure against the malfunction must be taken.
However, since the circuit of the buffer circuit 204 or the signal processing circuit 203 is disposed on the silicon substrate 201, the change in the voltage level due to the overflow